发明名称 |
LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
PROBLEM TO BE SOLVED: To provide a structure and a manufacturing method of a light emitting device that can reduce the amount of water remaining in the light emitting device to reduce deterioration of a light emitting element due to remaining water. SOLUTION: This light emitting device has a thin film transistor, an insulating film covering it, an electrode which is electrically connected to the transistor through a contact hole bored in the insulating film, and the light emitting element having a light emission layer sandwiched between a 1st electrode electrically connected to the electrode and a 2nd electrode. Then the light emitting device has a layer formed of a material different from that of the insulating film only between the electrode and the 1st electrode over the insulating film and the insulating film. COPYRIGHT: (C)2006,JPO&NCIPI
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申请公布号 |
JP2005309400(A) |
申请公布日期 |
2005.11.04 |
申请号 |
JP20050073139 |
申请日期 |
2005.03.15 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
SAKAKURA MASAYUKI;TAKAHASHI SHUHEI;IKEDA KAZUKO;FUTAMURA TOMOYA |
分类号 |
H05B33/10;G09F9/30;H01L51/50;H05B33/14;(IPC1-7):G09F9/30 |
主分类号 |
H05B33/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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