EXPOSURE MASK, METHOD FOR MEASURING FOCUS, AND METHOD FOR CONTROLLING EXPOSURE APPARATUS

摘要

PROBLEM TO BE SOLVED: To easily and accurately measure a defocus amount of an exposure apparatus.

SOLUTION: In an exposure mask having a mask pattern which is to be transferred onto a substrate by a projection optical system of an exposure apparatus, the mask pattern contains a pattern group comprising a main pattern and an assist pattern. The main pattern is a single slit pattern, while the assist pattern is a single slit or a plurality of slits disposed in only one side of the main pattern. The light shielding region of the mask pattern is a half-shielding part which partially transmits the exposure light. The transfer position of the projected image of the pattern group on a substrate varies by the defocus amount of the exposure apparatus.

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