| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an insulating layer provided with a high dielectric constant which is not obtained by silicon compound, and in which a desired capacity is secured while suppressing leak current. <P>SOLUTION: An insulating film 102a consisting of alumina is formed on a silicon substrate 101 by forming a metal mode film employing ECR (electron synchrotron resonance) sputtering method and irradiating plasma, then, the insulating layer consisting of two layers is formed by forming a dioxide hafnium film 103 on the insulating film 102a to obtain a structure, wherein the silicon substrate 101 and a high electric pressure resistant film or the insulating film 102a are contacted, and realize the lowering of leak current while a high dielectric constant is realized by a high dielectric constant film or the dioxide hafnium film 103 on the structure. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
