| 摘要 |
PROBLEM TO BE SOLVED: To suppress generation of micro irregularities on the main rear surface of a silicon epitaxial wafer, especially at a part of the rear surface facing the lift pin head part. SOLUTION: The vapor phase epitaxial growth system comprises a susceptor 1 having a counterbore 10 for mounting a silicon single crystal wafer W on which a silicon epitaxial layer is grown by vapor phase epitaxy, and a lift pin 4 arranged to be inserted into a through hole 13 provided in the counterbore wherein the lift pin is provided with a shaft part 41 and a lift pin head part 42 larger than the shaft part, and a lift pin receiving part 131 engaging with the lift pin head part is provided in the through hole. Horizontal cross-section of the lift pin head part has diameter decreasing gradually for the susceptor toward the shaft part, and the outer circumferential curved surface part 42c of the lift pin head part is formed to project outward. COPYRIGHT: (C)2006,JPO&NCIPI |
