| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To realize an interconnection structure that improves the adhesion between an upper low-k dielectric layer and a diffusion barrier cap dielectric layer existing therebeneath. <P>SOLUTION: In the interconnection structure, adhesion between the upper low-k (for example, the dielectric coefficient is less than 4.0) dielectric layer (for example, a dielectric containing an element group consisting of Si, C, O, and H) and the diffusion barrier cap dielectric layer (for example, a cap layer containing an element group consisting of C, Si, N, and H) existing therebeneath is improved, by providing an adhesion transition layer in between the two layers. Because the adhesion transition layer exists between the upper low-k dielectric layer and the diffusion barrier cap dielectric layer, the possibility that the layers in the interconnection structure are separated in a packaging process is reduced. The adhesion transition layer provided here comprises a lower SiO<SB>x</SB>(or SiON) contained region and an upper C inclination region. Such a structure and, in particular, a method for forming an adhesion transition layer are also provided. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
