| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high-power light emitting diode array which is improved in optical fetch efficiency by optimizing the thickness of an insulating film and a protective film. <P>SOLUTION: A luminescence wavelength exists between 700 nm or more and 750 nm or less, and the protective film is composed of a second insulating film 19 composed of oxidization silicon one by one from the uppermost surface, a protective film 14 composed of silicon nitride, and a first insulating film 11 composed of oxidization silicon. Further, the semiconductor layer directly under the second insulating layer is formed with compound semiconductors 4-6 expressed with a general formula Al<SB>x</SB>Ga<SB>1-x</SB>As (0.5≤x≤0.8). Moreover, the film thickness of the first insulating film 11 is 30 nm or less to 50 nm or less, and the film thickness of the protective film 14 composed of silicon nitride is set to d1, and when the film thickness of the second insulating film 19 is set to d2, reference symbols (d1, d2) are arbitrary values in a closed region in a specific range. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
