发明名称 RESIST PATTERN FORMING METHOD AND METHOD FOR PRODUCING CIRCUIT ELEMENT
摘要 <P>PROBLEM TO BE SOLVED: To provide a resist pattern forming method by which control of the dimensions of a resist pattern can be accurately performed and LER can be diminished. <P>SOLUTION: The resist pattern forming method includes the steps of applying a radiation to predetermined positions of a radiation sensitive resin composition on a substrate with the radiation sensitive resin composition containing a siloxane resin having a structural unit represented by formula (I) and a weight average molecular weight, in terms of polystyrene, by GPC of 500-1,000,000 and a radiation sensitive acid generator; developing the composition with an alkaline developer; applying a radiation; and carrying out heating. In the formula (I), R denotes a 1-20C linear or branched hydrocarbon group whose valence is n+1 or a 3-20C alicyclic hydrocarbon group whose valence is n+1, the linear or branched hydrocarbon group and the alicyclic hydrocarbon group each may be substituted; X denotes a group containing an acid-dissociable group; and n is 1 or 2. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005309141(A) 申请公布日期 2005.11.04
申请号 JP20040126805 申请日期 2004.04.22
申请人 JSR CORP 发明人 NISHIMURA ISAO;SHIMOKAWA TSUTOMU;EGAWA HIROMI
分类号 G03F7/075;C08G77/14;G03F7/039;G03F7/11;G03F7/38;G03F7/40;H01L21/027 主分类号 G03F7/075
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