| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a NAND flash memory device and a method of programming the same which are capable of rising a boosting level of a channel by isolating each source line of a flash memory cell block and controlling the each source line per block. <P>SOLUTION: The NAND flash memory device comprises; a plurality of cell blocks including a plurality of cell strings to which a plurality of flash cells are connected in series, wherein information is erased according to a predetermined command signal, or predetermined information is programmed on selected cells, or information of the selected cells is read; a plurality of source lines to which the plurality of cell strings in the plurality of cell blocks are connected respectively; and a source line selection part for applying different high voltages to the plurality of source lines respectively. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
