| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, having an interlayer insulating film which is superior in the embedding properties between device elements formed on a semiconductor substrate. SOLUTION: The semiconductor device has stacked-layer gate electrodes (1 to 7) formed on a semiconductor substrate (1), and an interlayer insulating film (10A) formed on the semiconductor substrate (1) so as to embed itself between the stacked-layer gate electrodes (1 to 7), wherein the impurity concentration within the interlayer insulating film (10A) is nonuniform in the thickness direction. COPYRIGHT: (C)2006,JPO&NCIPI
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