DEPOSITION METHOD FOR NON-VOLATILE RESISTANCE SWITCHING MEMORY

摘要

PROBLEM TO BE SOLVED: To provide a deposition method for a non-volatile resistance switching memory. SOLUTION: The method for depositing a switching material can be switched between persistent conductive states. The microelectronic device is a non-volatile resistance switching memory comprising the switching material for storing digital information. The method comprises a step of depositing the switching material by a standard CMOS deposition technique at a temperature lower than 400°C. COPYRIGHT: (C)2006,JPO&NCIPI