| 摘要 |
<P>PROBLEM TO BE SOLVED: To readily evaluate a use limit of a photomask used for a lithography process, when performing the lithography process by ultraviolet exposure. <P>SOLUTION: The photomask 1 for transferring a mask pattern on a substrate, by having a mask pattern forming region 4 irradiated with ultraviolet rays 10, is provided with an evaluation pattern 12 having recesses 15-17 forming the same kind of growth substance as the contamination growing by the ultraviolet rays in the mask pattern formation region 4, on at least any one face from among a mask pattern formation surface 8 and its backside 9. For instance, the evaluation pattern 12 is irradiated with a high brightness light source, and the use limit of the photomask 1 is evaluated, in response to a color degree of a shadow of each recess 15-17. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
