| 摘要 |
PROBLEM TO BE SOLVED: To obtain a thin-film transistor capable of reducing variation in threshold voltage, and to obtain manufacturing process. SOLUTION: The thin-film transistor comprises an insulating undercoat layer formed on a substrate, a semiconductor active layer composed of polysilicon formed on the insulating undercoat layer, and a gate electrode formed on the semiconductor active layer, while being insulated wherein the insulating undercoat layer is a silicon oxide film layer formed by plasma CVD, using tetraethoxy silane as the material. Carbon atom concentration of the silicon oxide film layer is preferably in the range of 6×10<SP>19</SP>/cm<SP>3</SP>to 1×10<SP>20</SP>/cm<SP>3</SP>, and the concentration of nitrogen atoms is preferably 3×10<SP>19</SP>/cm<SP>3</SP>or lower. COPYRIGHT: (C)2006,JPO&NCIPI
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