发明名称 INDIUM OXIDE - ZINC OXIDE - MAGNESIUM OXIDE -BASED SPUTTERING TARGET, AND TRANSPARENT ELECTROCONDUCTIVE FILM
摘要 PROBLEM TO BE SOLVED: To provide a target which does not form a nodule when being sputtered, and to provide an amorphous transparent electroconductive film superior in etching properties and in transparency for a light particularly having a wavelength of 400 to 450 nm. SOLUTION: The sputtering target comprises indium oxide, zinc oxide and magnesium oxide. Then, the sputtering target does not form the nodule when being sputtered. The amorphous transparent electroconductive film comprises indium oxide, zinc oxide and magnesium oxide. Then, the amorphous transparent electroconductive film is superior in etching properties and in transparency for the light having the wavelength of 400 to 450 nm. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005307269(A) 申请公布日期 2005.11.04
申请号 JP20040125429 申请日期 2004.04.21
申请人 IDEMITSU KOSAN CO LTD 发明人 INOUE KAZUYOSHI;MATSUBARA MASAHITO;TOMAI SHIGEKAZU;SHIMANE SACHIRO
分类号 G02F1/1343;C23C14/08;C23C14/34;H01B1/08;H01L21/285;H01L21/3205;H01L23/52;H01L31/0224;(IPC1-7):C23C14/34;G02F1/134;H01L21/320 主分类号 G02F1/1343
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