| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an insulated gate bipolar transistor which can prevent the occurrence of latchup by increasing the lateral resistance of an n-type emitter layer in a small formation area to suppress an increase in voltage of the pn junction formed by the n-type emitter layer and a p-type base layer. <P>SOLUTION: The n-type emitter layer 4 consists of a highly doped diffusion layer 46 and a lightly doped diffusion layer 47. An emitter electrode is in contact with the highly doped diffusion layer 46, but not with the lightly doped diffusion layer 47. The end of the highly doped diffusion layer 46 is formed in a p-type contact layer 3. By not forming a channel in the end of the highly doped diffusion layer 46 to increase the lateral resistance of the n-type emitter layer 4, tolerance to latchup can be increased while forming the n-type emitter layer 4 in a small area. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
