发明名称 MANUFACTURING METHOD OF THIN FILM TRANSISTOR
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing a thin film transistor in self-alignment by using a liquid drop discharging method regardless of the accuracy of the discharge position of a liquid drop discharging device. SOLUTION: An organic resin film 107 or the like are applied, and the organic resin film 107 is processed into a desired shape by using such a method as etch back, exposure, and development. A semiconductor layer 104 containing impurities of one conductive type is etched with the organic resin film having the desired shape as a mask. The organic resin film having the desired shape is used to form regions with different wettability. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005311335(A) 申请公布日期 2005.11.04
申请号 JP20050083179 申请日期 2005.03.23
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 MORISUE MASAFUMI;FUJII ITSUKI
分类号 G02F1/1368;H01L21/336;H01L29/786;H01L51/50;H05B33/14;(IPC1-7):H01L21/336;G02F1/136 主分类号 G02F1/1368
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