发明名称 |
MANUFACTURING METHOD OF THIN FILM TRANSISTOR |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a thin film transistor in self-alignment by using a liquid drop discharging method regardless of the accuracy of the discharge position of a liquid drop discharging device. SOLUTION: An organic resin film 107 or the like are applied, and the organic resin film 107 is processed into a desired shape by using such a method as etch back, exposure, and development. A semiconductor layer 104 containing impurities of one conductive type is etched with the organic resin film having the desired shape as a mask. The organic resin film having the desired shape is used to form regions with different wettability. COPYRIGHT: (C)2006,JPO&NCIPI |
申请公布号 |
JP2005311335(A) |
申请公布日期 |
2005.11.04 |
申请号 |
JP20050083179 |
申请日期 |
2005.03.23 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
MORISUE MASAFUMI;FUJII ITSUKI |
分类号 |
G02F1/1368;H01L21/336;H01L29/786;H01L51/50;H05B33/14;(IPC1-7):H01L21/336;G02F1/136 |
主分类号 |
G02F1/1368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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