| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a stage control method and a stage apparatus for controlling a mask stage for holding a mask to which a pattern is formed and a substance stage for holding a substance to which the pattern is transferred, a stage apparatus, and an exposure method utilizing the stage control method with which high precision exposure can be realized within a short period of time. <P>SOLUTION: In a sub-routine 601, when a wafer stage is moving in the X-axis direction, bending in the X-axis and Z-axis directions of a moving mirror for measuring Y-position extending in the X-axis direction is detected with an interferometer for measuring amount of yawing within the XY plane of a wafer stage. In a sub-routine 603, burning of the predetermined pattern to the wafer is conducted by taking the detected bending of the moving mirror into consideration and a residual error of bending of the moving mirror is detected from the result of such burning process. In the exposure of the step 613, the residual error is defined as the correcting value of the measurement result of pitching amount of the wafer stage and relative displacement of a reticle stage RST resulting from an Abbe error is corrected. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
