| 摘要 |
<P>PROBLEM TO BE SOLVED: To realize a CMP apparatus and a method, whereby the temperature distribution of the surface of a wafer present in the process of polishing can be measured. <P>SOLUTION: In the CMP apparatus, for polishing a wafer 7, which has a polishing pad 35 provided on its surface, a rotating platen 31, and a rotational wafer holding mechanism 8 for holding the wafer 7 by pressing the wafer 7 to the polishing pad, the platen 31 and the polishing pad 35 are transparent; and there is provided a thermography device 41 for measuring the temperature distribution of the whole of the wafer 7 in the process of polishing, through the platen 31 and the polishing pad 35. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
