| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser device, having a proper Gaussian shaped FFP with few ripples. SOLUTION: The semiconductor laser comprises a first conductivity-type semiconductor layer (200) which is formed on the principal plane of a substrate (101), active layer (205), a second conductivity-type semiconductor layer (210), waveguide region (10) formed by restricting a current flow in a region in stripe structure in the second conductivity-type semiconductor layer (210), and resonance surfaces (20) formed on end faces nearly perpendicular to the waveguide region (10). In the vicinity of the resonance surfaces (20), a plurality of recessed portions (110) are formed in the second conductivity-type semiconductor layer (210) separated from the waveguide region (10). COPYRIGHT: (C)2006,JPO&NCIPI
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