| 摘要 |
PROBLEM TO BE SOLVED: To improve the reliability of a chip size package type semiconductor device and a manufacturing method thereof. SOLUTION: A support 55 is joined with the surface of a semiconductor substrate 51 on which a pad electrode 53 is formed. Then a via hole 57 from the rear side of the semiconductor substrate 51 to the pad electrode 53 is formed, and a shallow groove 58 with an aperture diameter smaller than the diameter of the via hole 57 is formed to the rear side of the semiconductor substrate. Then a wire layer 63 is electrically connected to the pad electrode 53 through the via hole 57, and extended from the via hole 57 onto the rear side of the semiconductor substrate 51. Thereafter, a protection layer 65 and a conductive terminal 68 are formed. Finally, the semiconductor substrate 51 joined with the support 55 is diced into individual semiconductor chips 51A by dicing. COPYRIGHT: (C)2006,JPO&NCIPI
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