发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD, CIRCUIT BOARD, AND ELECTRONIC APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor device wherein the warping of a substrate which comes from a difference in stress between the substrate and a functional layer formed on the substrate can be suppressed or removed, and also to provide its manufacturing method, a circuit board, and an electronic apparatus. <P>SOLUTION: The method of manufacturing the semiconductor device having an electrode 34 extended through the substrate 10 comprises processes of forming a concave portion H4 in the active surface of the substrate, forming an insulation layer 22 on the active surface of the substrate including the inner surface of the concave portion, removing at least part of the insulation layer formed outside the concave portion, forming the electrode by filling the inside of the concave portion formed with the insulation film by a conductor, and removing the rear face side of the active surface to expose the electrode from the rear face of the active surface. These processes are performed in the order described above. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005310816(A) 申请公布日期 2005.11.04
申请号 JP20040121646 申请日期 2004.04.16
申请人 SEIKO EPSON CORP 发明人 MIYAZAWA IKUYA
分类号 H01L23/52;H01L21/3205;H01L21/60;H01L21/768;H01L23/12;H01L23/48;H01L25/00;H01L25/065;H01L25/07;H01L25/18;H01L27/01 主分类号 H01L23/52
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