发明名称 |
SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, LIQUID CRYSTAL TELEVISION AND EL TELEVISION |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a high withstand voltage and a high step coverage property of a gate insulating layer by a manufacturing method with a small number of processes and high usability of materials. SOLUTION: A method for manufacturing a semiconductor device comprises the steps of: forming a plurality of first conductive layers over a substrate, forming a first insulating layer to fill the gaps of the plurality of the first conductive layers, forming a second insulating layer over the first insulating layer and the plurality of the first conductive layers, and forming a semiconductor region and a second conductive layer over the second insulating layer. COPYRIGHT: (C)2006,JPO&NCIPI |
申请公布号 |
JP2005311341(A) |
申请公布日期 |
2005.11.04 |
申请号 |
JP20050085195 |
申请日期 |
2005.03.24 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
MAEKAWA SHINJI |
分类号 |
G02F1/136;H01L21/288;H01L21/336;H01L29/786;(IPC1-7):H01L21/336 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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