| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, wherein a process is simplified, and an auxiliary capacitor having superior electrical characteristics is disposed in the peripheral circuit of a ferroelectric capacitor. SOLUTION: The semiconductor device comprises a semiconductor substrate (S), a ferroelectric capacitor (A), obtained by sandwiching a ferroelectric film (300) provided above the semiconductor substrate between a lower electrode (200) and an upper electrode (400); a protective film (124) formed to cover the ferroelectric capacitor; and an auxiliary capacitor (B) provided in a peripheral circuit part of the ferroelectric capacitor and formed by using the protective film as a capacitor insulating film. COPYRIGHT: (C)2006,JPO&NCIPI
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