MEMORY DEVICE USING MULTI-LAYERS WITH GRADED RESISTANCE CHANGE
摘要
<p>A memory device using a multi-layer with a graded resistance change is provided. The memory device includes: a lower electrode; a data storage layer being located on the lower electrode and having the graded resistance change; and an upper electrode being located on the data storage layer.</p>
申请公布号
KR20050105297(A)
申请公布日期
2005.11.04
申请号
KR20040029675
申请日期
2004.04.28
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
LEE, MYOUNG JAE;YOO, IN KYEONG;SEO, SUN AE;SUH, DONG SEOK;SEO, DAVID;JEON, SANG HUN
