FIN FIELD EFFECT TRANSISTOR ARRANGEMENT AND METHOD FOR PRODUCING A FIN FIELD EFFECT TRANSISTOR ARRANGEMENT

摘要

The invention relates to a fin field effect transistor arrangement comprising a substrate, a first fin field effect transistor on and/or in said substrate that has a fin in which the channel region is formed between the first and second source/drain region, and above which the gate region is formed, and comprising a second fin field effect transistor on and/or in the substrate that has a fin in which the channel region is formed between the first and second source/drain region, and above which the gate region is formed. The height of the fin of the first fin field effect transistor arrangement is greater than the height of the fin of the second fin field effect transistor.