| 摘要 |
A method of dry cleaning a plasma processing system is described, wherein the formation of particulate during dry cleaning is substantially minimized. In one embodiment, the dry cleaning process is adjusted in order to substantially reduce spatial variations of the dry cleaning rate within the plasma processing system. In another embodiment, endpoint detection is utilized to determine the completion of the dry cleaning process in order to avoid excessive ion sputtering of the underlying process chamber components.
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