Organic field effect transistor has narrow strip type conductor drain and source electrodes, a gate dielectric and a gate electrode that overlaps the narrow strips of the drain and source electrodes

摘要

Organic field effect transistor (1) has drain (2) and source (3) electrodes as well as a gate dielectric (5) that is isolated from the drain and source and a partially overlapping gate electrode (6). The drain and source electrodes are configured as narrow strip conductors extending in a first lateral direction (x). The gate electrode is arranged in a perpendicular direction (y) and extends over the gate and source electrodes for defined distances (B2, B3). The widths correspond to the overlap lengths of the FET.