发明名称 METHOD AND APPARATUS FOR FORMING A METAL LAYER
摘要 <p>A method and a processing tool are provided for forming a metal layer with improved morphology on a substrate. The method includes pre-treating the substrate by exposing the substrate to excited species in a plasma, exposing the pre-treated substrate to a process gas containing a metal-carbonyl precursor, and forming a metal. layer on the pre-treated substrate surface by a chemical vapor deposition process. The metal-carbonyl precursor can contain W(CO)6, Ni(CO)4, Mo(CO)6, Co2(CO)8, Rh4(CO)12, Re2(CO)10, Cr(CO)6, or Ru3(CO)12 or any combination thereof, and the metal layer can contain W, Ni, Mo, Co, Rh, Re, Cr, or Ru, or any combination thereof, respectively.</p>
申请公布号 WO2005103323(A1) 申请公布日期 2005.11.03
申请号 WO2005US03669 申请日期 2005.02.08
申请人 TOKYO ELECTRON LIMITED;INTERNATIONAL BUSINESS MACHINES CORPORATION;IKEDA, TARO;MATSUDA, TSUKASA;MCFEELY, FENTON, R.;MALHOTRA, SANDRA, G.;SIMON, ANDREW, H.;YURKAS, JOHN, J. 发明人 IKEDA, TARO;MATSUDA, TSUKASA;MCFEELY, FENTON, R.;MALHOTRA, SANDRA, G.;SIMON, ANDREW, H.;YURKAS, JOHN, J.
分类号 C23C16/02;C23C16/16;C23C16/509;(IPC1-7):C23C16/02 主分类号 C23C16/02
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