| 发明名称 |
BACKGATED FINFET HAVING DIFERENT OXIDE THICKNESSES |
| 摘要 |
A method of producing a backgated FinFET having different dielectric layer thickness on the front and back gate sides includes steps of introducing impurities into at least one side of a fin of a FinFET to enable formation of dielectric layers with different thicknesses. The impurity, which may be introduced by implantation, either enhances or retards dielectric formation.
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| 申请公布号 |
US2005245009(A1) |
申请公布日期 |
2005.11.03 |
| 申请号 |
US20040709323 |
申请日期 |
2004.04.28 |
| 申请人 |
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发明人 |
BRYANT ANDRES;DOKUMACI OMER H.;HANAFI HUSSEIN I.;NOWAK EDWARD J. |
| 分类号 |
H01L21/265;H01L21/00;H01L21/335;H01L21/336;H01L21/84;H01L29/423;H01L29/786;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/265 |
| 代理机构 |
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代理人 |
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| 主权项 |
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