发明名称 Asynchronous request/synchronous data dynamic random access memory
摘要 At page 54, please delete the current abstract and replace it with the following: An integrated circuit memory device comprises a latch circuit to load an address using a first control signal. A first signal level transition of the first control signal is used to load the address. A memory array stores data at a memory location that is based on the address. An output buffer outputs the data after a period of time from the first signal level transition. A register stores a value that specifies between at least a first mode and a second mode. When the value specifies the first mode, the output buffer outputs the data in response to address transitions that occur after the first signal level transition. When the value specifies the second mode, the output buffer outputs data synchronously with respect to an external clock signal.
申请公布号 US2005243612(A1) 申请公布日期 2005.11.03
申请号 US20050153679 申请日期 2005.06.15
申请人 发明人 BARTH RICHARD M.;HOROWITZ MARK A.;HAMPEL CRAIG E.;WARE FREDERICK A.
分类号 G06F12/00;G06F13/16;G11C5/00;G11C7/10;G11C7/22;G11C8/18;(IPC1-7):G11C5/00 主分类号 G06F12/00
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