Method for producing a nitride semiconductor crystal layer, nitride semiconductor crystal layer and substrate for producing the same

摘要

A mask with rectangular openings is formed on a large-scaled silicon substrate, and an AlN micro crystalline layer is formed in a thickness of 200 nm or over through the mask on the silicon substrate by means of selective and lateral growth. Then, a nitride semiconductor crystal layer with a composition of InxGayAlzN (0<=x, y, z<=1, x+y+z=1) is formed on the AlN micro crystalline layer.