发明名称 |
METHOD FOR PRODUCING HIGH THROUGHPUT STRAINED-SI CHANNEL MOSFETS |
摘要 |
A method for forming a strained silicon layer device with improved wafer throughput and low defect density including providing a silicon substrate; epitaxially growing a first silicon layer using at least one deposition precursor selected from the group consisting of disilane and trisilane; epitaxially growing a step-grade SiGe buffer layer over and contacting the first silicon layer using at least one deposition precursor selected from the group consisting of disilane and trisilane; epitaxially growing a SiGe capping layer over and contacting the step-grade SiGe buffer layer using at least one deposition precursor selected from the group consisting of disilane and trisilane; and, epitaxially growing a second silicon layer using at least one deposition precursor selected from the group consisting of disilane and silane.
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申请公布号 |
US2005245058(A1) |
申请公布日期 |
2005.11.03 |
申请号 |
US20040838625 |
申请日期 |
2004.05.03 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LEE KUEN-CHYR;YAO LIANG-GI;CHEN SHIH-CHANG;LIANG MONG-SONG |
分类号 |
C30B1/00;C30B25/02;H01L21/20;H01L21/205;H01L21/306;H01L21/36;H01L21/44;(IPC1-7):C30B1/00 |
主分类号 |
C30B1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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