METHOD OF MAKING A VERTICAL ELECTRONIC DEVICE

摘要

A semiconductor substrate (906) having had a semiconductor device (902) formed on the front side (904) of the semiconductor substrate is subjected to an ion implant on the back side of the semiconductor substrate. The active surface (908a)of the doped back side is controllably heated to perform an implant anneal. The implant anneal of the back side of the semiconductor substrate is performed using a flash anneal process which avoids causing the destructive of the semiconductor device formed on the front side (904) of the semiconductor substrate