发明名称 Integrated circuit having a strengthened passivation structure
摘要 Provided is an integrated circuit (IC) having a strengthened passivation layer. In one example, the IC comprises a semiconductor substrate, a multilevel interconnect structure formed on the semiconductor substrate, and a multilayer passivation structure overlying the multilevel interconnect structure. At least one metal line of the multilevel interconnect structure forms a taper profile.
申请公布号 US2005242444(A1) 申请公布日期 2005.11.03
申请号 US20040965623 申请日期 2004.10.14
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 HUANG KUN-MING;HSU CHEN-FU
分类号 H01L23/31;H01L23/528;H01L23/532;H01L27/00;H01L29/40;(IPC1-7):H01L29/40 主分类号 H01L23/31
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