发明名称 |
Integrated circuit having a strengthened passivation structure |
摘要 |
Provided is an integrated circuit (IC) having a strengthened passivation layer. In one example, the IC comprises a semiconductor substrate, a multilevel interconnect structure formed on the semiconductor substrate, and a multilayer passivation structure overlying the multilevel interconnect structure. At least one metal line of the multilevel interconnect structure forms a taper profile. |
申请公布号 |
US2005242444(A1) |
申请公布日期 |
2005.11.03 |
申请号 |
US20040965623 |
申请日期 |
2004.10.14 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
HUANG KUN-MING;HSU CHEN-FU |
分类号 |
H01L23/31;H01L23/528;H01L23/532;H01L27/00;H01L29/40;(IPC1-7):H01L29/40 |
主分类号 |
H01L23/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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