COMPOSITION FOR THIN FILM CAPACITIVE DEVICE, INSULATING FILM WITH HIGH DIELECTRIC CONSTANT, THIN FILM CAPACITIVE DEVICE, THIN-FILM LAMINATED CAPACITOR AND PROCESS FOR PRODUCING THIN FILM CAPACITIVE DEVICE

摘要

A composition for thin film capacitive device comprising a bismuth layered compound whose c-axis is oriented substantially perpendicularly to a basal plane, wherein the bismuth layered compound is represented by the composition formula: (Bi2O2)<2+>(Am-1BmO3m+1)<2-> or Bi2Am-1BmO3m+3 in which the character m is an odd number, and wherein at least part of the Bi and/or A of the bismuth layered compound is substituted with a rare earth element, the number of moles of rare earth element used in the substitution relative to the total molar quantity (m+1) of Bi and A being >1.0 but <=2.8.