Production of praseodymium layers comprises depositing metallic praseodymium on thin silica, silicon oxynitride or silicon nitride layer, reacting deposited praseodymium with oxygen or water vapor and heating substrate in pure nitrogen

摘要

Production of praseodymium layers comprises: (A) depositing metallic praseodymium on a thin silica, silicon oxynitride or silicon nitride layer, either by vaporization in ultra high vacuum or by chemical vapor deposition; (B) reacting the deposited praseodymium with oxygen or water vapor at room temperature or above; and (C) heating the substrate in pure nitrogen for a few minutes at 600 - 800[deg]C. An independent claim is included for substrates comprising stacked layers produced using the method.