| 摘要 |
A method for manufacturing a semiconductor device in which a film of an oxide of Hf1-xAl x (0<x<0.3) having desired properties is formed as a gate insulating film. The method comprises a step (a) of heating a silicon substrate in a reaction chamber and a step (b) of depositing an Hf1- xAlxO:N film (0.1<x<0.3) having a dielectric constant higher than that of silicon oxide and containing absorbed N on the heated silicon substrate by thermal CVD while supplying a film-forming gas containing a material gas, a nitrogen gas, and a nitriding-promoter gas onto the surface of the silicon substrate.
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