METHOD FOR CORRECTING ELECTRON BEAM EXPOSURE DATA

摘要

At first, identifiable electron beam exposure data is inputted for each type of pattern of a semiconductor device (S601). Electron beam exposure data of first type of pattern is not corrected while electron beam exposure data of second type of pattern is corrected (S603). The first type of pattern is a dummy pattern not having an effect on the function of the semiconductor device. The second type of pattern is a normal pattern having an effect, for example, on the function of the semiconductor device.