发明名称 INDUCING SEMICONDUCTOR CRYSTALLIZATION USING A CAPILLARY STRUCTURE
摘要 A method for fabricating a semiconductor device includes providing a layer of a semiconductor material on at least a portion of a surface of a substrate, and forming along the surface a capillary structure, which is in communication with the semiconductor material but is at least partially empty of the semiconductor material. The semiconductor material is heated, so as to cause the semiconductor material to melt and flow into the capillary structure. Upon allowing the semiconductor material to cool, a crystal is seeded in the capillary structure and spreads from the capillary structure through an area of the semiconductor material.
申请公布号 WO2004107393(A3) 申请公布日期 2005.11.03
申请号 WO2004IL00469 申请日期 2004.06.02
申请人 ORBOTECH LTD.;RUSIAN, PETER;GLAZER, ARIE;DORFAN, MANNIE;RAAB, YOEL 发明人 RUSIAN, PETER;GLAZER, ARIE;DORFAN, MANNIE;RAAB, YOEL
分类号 H01L21/20;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/786 主分类号 H01L21/20
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