发明名称 |
Atomic implantation and thermal treatment of a semiconductor layer |
摘要 |
Methods for forming a semiconductor structure are described. In an embodiment, the technique includes providing a donor wafer having a first semiconductor layer and a second semiconductor layer on the first layer and having a free surface; coimplanting two different atomic species through the free surface of the second layer to form a zone of weakness zone in the first layer; bonding the free surface of the second layer to a host wafer; and supplying energy to detach at the zone of weakness a semiconductor structure comprising the host wafer, the second layer and a portion of the first layer. Advantageously, the donor wafer includes a SiGe layer, and the co-implantation of atomic species is conducted according to implantation parameters adapted to enable a first species to form the zone of weakness in the SiGe layer, and to enable a second species to provide a concentration peak located beneath the zone of weakness in the donor wafer to thus minimize surface roughness resulting from detachment at the zone of weakness.
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申请公布号 |
US2005245049(A1) |
申请公布日期 |
2005.11.03 |
申请号 |
US20050179713 |
申请日期 |
2005.07.11 |
申请人 |
AKATSU TAKESHI;DAVAL NICOLAS;NGUYEN NGUYET-PHUONG;RAYSSAC OLIVIER;BOURDELLE KONSTANTIN |
发明人 |
AKATSU TAKESHI;DAVAL NICOLAS;NGUYEN NGUYET-PHUONG;RAYSSAC OLIVIER;BOURDELLE KONSTANTIN |
分类号 |
H01L21/762;(IPC1-7):H01L21/30;H01L21/46 |
主分类号 |
H01L21/762 |
代理机构 |
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