| 摘要 |
The present invention relates to a flash memory cell comprising a silicon substrate having an active region comprising a channel region and source-/drain-regions, the active region comprising a projecting portion, which projecting portion at least comprising said channel region; a tunneling dielectric layer formed on the surface of said active region; a floating gate formed on the surface of said tunneling dielectric layer for storing electric charges; an inter-gates coupling dielectric layer formed on the surface of said floating gate, and a control gate formed on the surface of said inter-gates coupling dielectric layer, wherein said floating gate is formed to have a groove-like shape for at least partly encompassing said projecting portion of said active region. This invention further relates to a flash memory device comprising such flash memory cells, as well as a manufacturing method thereof.
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