发明名称 |
Compound semiconductor wafer and process for producing the same |
摘要 |
A compound semiconductor wafer providing an InGaAs light receiving layer having superior crystal characteristic suitable for a near-infrared sensor includes an InAs<SUB>x</SUB>P<SUB>1-x </SUB>graded buffer layer consisting of a plurality of layers positioned on an InP substrate and an InAs<SUB>y</SUB>P<SUB>1-y </SUB>buffer layer positioned on the graded buffer layer, sandwiched between said InP substrate and the InGaAs layer, wherein maximum value of PL light emission intensity at an interface of each of the layers of the graded buffer layer and the buffer layer is, at every interface, smaller than 3/10 of the maximum PL light emission intensity of the buffer layer.
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申请公布号 |
US2005242372(A1) |
申请公布日期 |
2005.11.03 |
申请号 |
US20040514973 |
申请日期 |
2004.11.17 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
IWASAKI TAKASHI;SAWADA SHIGERU;KIMURA HIROYA;OHKI KENJI |
分类号 |
H01L21/205;H01L21/00;H01L21/20;H01L29/732;H01L31/0304;H01L31/0328;H01L31/0336;H01L31/072;H01L31/10;H01L31/103;H01L31/109;H01L31/18;(IPC1-7):H01L21/00;H01L31/032;H01L31/033 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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