发明名称 Voltage/process evaluation in semiconductors
摘要 An evaluation circuit comprises a test circuit configured to provide a test voltage indicative of a characteristic of a semiconductor device, a reference circuit configured to provide a first reference voltage, a first delay circuit configured to convert the test voltage into a first delay, a second delay circuit configured to convert the first reference voltage into a second delay, and a first latching circuit configured to determine a relationship between the first delay and the second delay.
申请公布号 US2005246598(A1) 申请公布日期 2005.11.03
申请号 US20040836753 申请日期 2004.04.30
申请人 INFINEON TECHNOLOGIES NORTH AMERICA CORP. 发明人 MINZONI ALESSANDRO
分类号 G01R31/28;G11C29/38;G11C29/50;H01L21/336;H01L21/66;H01L21/8242;H01L23/544;H01L23/58;H03K19/01;(IPC1-7):H03K19/01 主分类号 G01R31/28
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