发明名称 |
Process of manufacturing a semiconductor device |
摘要 |
A process of manufacturing a semiconductor device includes the steps of forming a stacked structure of a first III-V compound semiconductor layer containing In and having a composition different from InP and a second III-V compound semiconductor layer containing In. The second III-V compound semiconductor layer is formed over the first III-V compound semiconductor layer and growing an InP layer at regions adjacent the stacked structure to form a stepped structure of InP. The process further includes the step of wet-etching the stepped structure and the second III-V compound semiconductor layer using an etchant containing hydrochloric acid and acetic acid to remove at least the second III-V compound semiconductor layer.
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申请公布号 |
US2005245089(A1) |
申请公布日期 |
2005.11.03 |
申请号 |
US20050155474 |
申请日期 |
2005.06.20 |
申请人 |
FUJITSU QUANTUM DEVICES LIMITED |
发明人 |
WATANABE TAKAYUKI;MICHITSUTA TSUTOMU;HASEGAWA TARO;FUJII TAKUYA |
分类号 |
H01S5/042;H01L21/306;H01S5/20;H01S5/227;(IPC1-7):H01L21/302 |
主分类号 |
H01S5/042 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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