发明名称 |
Reliability improvement of SiOC etch with trimethylsilane gas passivation in Cu damascene interconnects |
摘要 |
A method of forming a SiCOH etch stop layer in a copper damascene process is described. A substrate with an exposed metal layer is treated with H<SUB>2 </SUB>or NH<SUB>3 </SUB>plasma to remove metal oxides. Trimethylsilane is flowed into a chamber with no RF power at about 350° C. to form at least a monolayer on the exposed metal layer. The SiCOH layer is formed by a PECVD process including trimethylsilane and CO<SUB>2 </SUB>source gases. Optionally, a composite SiCOH layer comprised of a low compressive stress layer on a high compressive stress layer is formed on the substrate. A conventional damascene sequence is then used to form a second metal layer on the exposed metal layer. Via Rc stability is improved and a lower leakage current is achieved with the trimethylsilane passivation layer. A composite SiCOH etch stop layer provides improved stress migration resistance compared to a single low stress SiCOH layer.
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申请公布号 |
US2005245100(A1) |
申请公布日期 |
2005.11.03 |
申请号 |
US20040835788 |
申请日期 |
2004.04.30 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO. |
发明人 |
WU ZHEN-CHENG;CHEN BI-TROUG;CHANG WENG;JANG SYUN-MING;LIN SU-HORNG |
分类号 |
H01L21/306;H01L21/314;H01L21/316;H01L21/4763;H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/306 |
代理机构 |
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