发明名称 |
Deposition thickness measuring method, material layer forming method, deposition thickness measuring apparatus, and material layer forming apparatus |
摘要 |
Light emitted from a light emitting device is irradiated onto a film thickness monitoring region and the light conveyed from the monitoring region is detected by a light receiving device. The light emitting device and the light receiving device may be provided within the film forming chamber. The absorption intensity or fluorescence intensity or X ray intensity or the reflection rate at the monitoring region which is formed on a portion of the substrate from the same material as the material layer at the time of deposition is detected based on data from the light receiving device. A controller then controls the transporting rate of a deposition source and/or the heating state of a heater to adjust the deposition rate, whereby a material layer having a desired thickness is formed on the substrate.
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申请公布号 |
US2005244570(A1) |
申请公布日期 |
2005.11.03 |
申请号 |
US20050071276 |
申请日期 |
2005.03.03 |
申请人 |
TANASE KENJI;ISHIDA HIROKI |
发明人 |
TANASE KENJI;ISHIDA HIROKI |
分类号 |
C23C14/12;C23C14/26;C23C14/54;C23C16/00;G01B11/06;H05B33/10;H05B33/14;(IPC1-7):C23C16/00 |
主分类号 |
C23C14/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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