发明名称 Input circuit for memory device
摘要 An input circuit for a semiconductor memory device is disclosed. The input circuit controlling transmission paths for data having passed through a data input buffer by using a 1-clock shifted block column address is provided. In particular, a data input apparatus improving a data processing speed by advancing an operation time point of a data bus writer is provided.
申请公布号 US2005243641(A1) 申请公布日期 2005.11.03
申请号 US20050092382 申请日期 2005.03.29
申请人 HYNIX SEMICONDUCTOR INC. 发明人 LEE CHANG H.
分类号 G11C11/4093;G11C5/00;G11C7/10;(IPC1-7):G11C5/00 主分类号 G11C11/4093
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