发明名称 |
HIGH PERFORMANCE STRESS-ENHANCED MOSFETs USING Si:C AND SiGe EPITAXIAL SOURCE/DRAIN AND METHOD OF MANUFACTURE |
摘要 |
A semiconductor device and method of manufacturing a semiconductor device. The semiconductor device includes channels for a pFET and an nFET. A SiGe layer is selectively grown in the source and drain regions of the pFET channel and a Si:C layer is selectively grown in source and drain regions of the nFET channel. The SiGe and Si:C layer match a lattice network of the underlying Si layer to create a stress component. In one implementation, this causes a compressive component in the pFET channel and a tensile component in the nFET channel. |
申请公布号 |
WO2005043591(A8) |
申请公布日期 |
2005.11.03 |
申请号 |
WO2004US34562 |
申请日期 |
2004.10.19 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;CHIDAMBARRAO, DURESETI;DOKUMACI, OMER;CHEN, HUAJIE |
发明人 |
CHIDAMBARRAO, DURESETI;DOKUMACI, OMER;CHEN, HUAJIE |
分类号 |
H01L;H01L21/336;H01L21/8238;H01L21/84;H01L27/01;H01L27/12;H01L29/10 |
主分类号 |
H01L |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|