发明名称 |
Fabrication method of polycrystalline silicon liquid crystal display device |
摘要 |
A method for fabricating a polysilicon silicon liquid crystal display device is disclosed in which a contact hole connecting source and drain electrodes to an active layer is formed without a stepped portion. An insulation layer containing a porous silicon nitride layer is formed. Wet etching the contact hole through the porous silicon nitride layer and an underlying silicon oxide layer does not generate the stepped portion as the etch rates of the porous silicon nitride layer and the silicon oxide layer are the same. Because the stepped portion is not generated at a contact hole, disconnection of source and drain electrodes formed in the contact hole is prevented, thereby preventing deterioration of the liquid crystal display device from occurring.
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申请公布号 |
US2005242352(A1) |
申请公布日期 |
2005.11.03 |
申请号 |
US20040005646 |
申请日期 |
2004.12.06 |
申请人 |
LG PHILIPS LCD CO., LTD. |
发明人 |
JEOUNG HUN;JANG CHANG-JAE |
分类号 |
G02F1/136;G02F1/1368;H01L21/336;H01L21/77;H01L21/84;H01L29/04;(IPC1-7):H01L29/04 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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