| 摘要 |
Thin-layer electronic device, in particular a thin-layer power device, and process for fabricating this device. According to the invention, an electronic device is formed comprising an active part ( 38,40,42 ), a first thin layer ( 36 ) which is made of a semiconductor material and in which this active part is formed, and a substrate ( 44 ) which is made of a conductive material. This device also comprises a carrier recombination zone ( 46 ) which is located between the substrate and the first thin layer and which also ensures a resistive electric contact between this substrate and this first thin layer.
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