| 摘要 |
<p>An object of the present invention is to provide a method for producing a compound semiconductor light-emitting device wafer, which method solves problems in terms of debris which would otherwise be deposited on the surface of the wafer during production thereof. Another object is to provide a compound semiconductor light-emitting device wafer, of high quality, having no debris.The inventive production method of a compound semiconductor light-emitting device wafer comprises a step of forming a protective film on the top surface (i.e., surface on a semiconductor side) and/or the bottom surface of a compound semiconductor light-emitting device wafer including a substrate and numerous compound semiconductor light-emitting devices, the devices being regularly and periodically arranged with separation zones being disposed therebetween; a step of forming separation grooves by means of laser processing in the separation zones of the surface on which the protective film is formed, while a gas is blown onto a laser-irradiated portion; and a step of removing at least a portion of the protective film, which steps are performed in the above sequence.</p> |
